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Reduction of etch pits in heteroepitaxial growth of 3CSiC on silicon
Reduction of etch pits in heteroepitaxial growth of 3CSiC on silicon
- Source :
- Journal of Crystal Growth. 148:116-124
- Publication Year :
- 1995
- Publisher :
- Elsevier BV, 1995.
-
Abstract
- The formation of etch pits during heteroepitaxial growth of 3CSiC on silicon is a common occurrence. A comparison of the morphology of 3CSiC epilayers grown on silicon at both atmospheric and low pressures shows that the problem is more severe when the epilayers are grown at low reactor gas pressure. It is found that the density of etch pits is affected by the condition of the susceptor for both atmospheric and low pressure processes. At low pressure, the composition of the process gas during buffer layer growth plays an important role in suppressing the formation of etch pits. The nature of etch pits and various attempts to suppress the formation of etch pits are discussed.
- Subjects :
- Silicon
fungi
Metallurgy
technology, industry, and agriculture
chemistry.chemical_element
Mineralogy
macromolecular substances
Condensed Matter Physics
law.invention
Inorganic Chemistry
stomatognathic system
chemistry
Etch pit density
Gas pressure
law
Materials Chemistry
Layer (electronics)
Susceptor
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 148
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........262a6a0f3fc1f27ffd1c194961515aee
- Full Text :
- https://doi.org/10.1016/0022-0248(94)00865-5