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Schottky diodes on Si1−x−yGexCy alloys: effect of the C-incorporation
- Source :
- Applied Surface Science. 102:134-137
- Publication Year :
- 1996
- Publisher :
- Elsevier BV, 1996.
-
Abstract
- Si 1− x−y Ge x C y films have been grown by using a rapid thermal chemical deposition reactor. The growth temperatures were 650°C and 550°C and lead to Ge-contents of about 16% and 10%, respectively. The epilayers were characterized by infrared spectroscopy and Raman spectroscopy. The C-fraction varied from 0 to 1.25%. The shifts of Raman frequencies with increasing C-content cannot be explained in terms of change in strain. Electrical characterizations of tungsten contacts to n- and p-type films were achieved through current-voltage measurements. The Schottky barrier on n-type does not depend on the composition. This result indicates that the Fermi level at the interface with W is pinned relative to the conduction band. The Schottky barrier on p-type increased with the C-fraction. The increased magnitude seems to be too large to be explained in terms of variation of the band-gap-energy. The barrier height, for a given C-fraction, is larger for the films prepared at 550°C. This result can be ascribed to the lower Ge-incorporation at low temperature. Some samples were annealed at 1000°C. As expected, substitutional C-atoms precipitate to form silicon carbide. This formation of β-SiC precipitates results in detrimental effects on Schottky diode properties.
- Subjects :
- Materials science
Schottky barrier
Fermi level
Analytical chemistry
General Physics and Astronomy
Infrared spectroscopy
Schottky diode
chemistry.chemical_element
Surfaces and Interfaces
General Chemistry
Tungsten
Condensed Matter Physics
Surfaces, Coatings and Films
symbols.namesake
chemistry.chemical_compound
chemistry
Thermal
symbols
Silicon carbide
Raman spectroscopy
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 102
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........26150ea844cc7f19a6931c0caa9dfe48