Back to Search Start Over

Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers

Authors :
T. Laine
C. Corbel
Pekka J. Hautojärvi
Kimmo Saarinen
Source :
Materials Science Forum. :879-884
Publication Year :
1997
Publisher :
Trans Tech Publications, Ltd., 1997.

Subjects

Subjects :
Materials science
Condensed matter physics
Mechanics of Materials
Mechanical Engineering
Superlattice
Doping
General Materials Science
Condensed Matter Physics
Compensation (engineering)

Details

ISSN :
16629752
Database :
OpenAIRE
Journal :
Materials Science Forum
Accession number :
edsair.doi...........2604637f4b6bad57f54418a804a6b2d5
Full Text :
https://doi.org/10.4028/www.scientific.net/msf.258-263.879
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details