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Electronic and magnetic properties of single-layer FeCl2 with defects
- Source :
- Physical Review B. 103
- Publication Year :
- 2021
- Publisher :
- American Physical Society (APS), 2021.
-
Abstract
- The formation of lattice defects and their effect on the electronic properties of single-layer ${\mathrm{FeCl}}_{2}$ are investigated by means of first-principles calculations. Among the vacancy defects, namely mono-, di-, and three-Cl vacancies and mono-Fe vacancy, the formation of mono-Cl vacancy is the most preferable. Comparison of two different antisite defects reveals that the formation of the Fe-antisite defect is energetically preferable to the Cl-antisite defect. While a single Cl vacancy leads to a $1{\ensuremath{\mu}}_{B}$ decrease in the total magnetic moment of the host lattice, each Fe vacant site reduces the magnetic moment by $4{\ensuremath{\mu}}_{B}$. However, adsorption of an excess Cl atom on the surface changes the electronic structure to a ferromagnetic metal or to a ferromagnetic semiconductor depending on the adsorption site without changing the ferromagnetic state of the host lattice. Both Cl-antisite and Fe-antisite defected domains change the magnetic moment of the host lattice by $\ensuremath{-}1{\ensuremath{\mu}}_{B}$ and $+3{\ensuremath{\mu}}_{B}$, respectively. The electronic ground state of defected structures reveals that (i) single-layer ${\mathrm{FeCl}}_{2}$ exhibits half-metallicity under the formation of vacancy and Cl-antisite defects; (ii) ferromagnetic metallicity is obtained when a single Cl atom is adsorbed on upper-Cl and Fe sites, respectively; and (iii) ferromagnetic semiconducting behavior is found when a Cl atom is adsorbed on a lower-Cl site or a Fe-antisite defect is formed. Simulated scanning electron microscope images show that atomic-scale identification of defect types is possible from their electronic charge density. Further investigation of the periodically Fe-defected structures reveals that the formation of the single-layer ${\mathrm{FeCl}}_{3}$ phase, which is a dynamically stable antiferromagnetic semiconductor, is possible. Our comprehensive analysis on defects in single-layer ${\mathrm{FeCl}}_{2}$ will complement forthcoming experimental observations.
Details
- ISSN :
- 24699969 and 24699950
- Volume :
- 103
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi...........2536e2cd49c627d6ed4b454d9fd0735f
- Full Text :
- https://doi.org/10.1103/physrevb.103.014106