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Investigation on physical origins of endurance failures in PRAM

Authors :
D.H. Jang
H.S. Jeong
Gitae Jeong
S. W. Nam
Dong-ho Ahn
Sanghyeon Jeon
Shinhyung Kim
Kyu-Man Hwang
Jung-Dal Choi
Jun-Soo Bae
Han-Ku Cho
Kwangho Park
Chan-Hoon Park
Jung-Chak Ahn
Source :
2012 IEEE International Reliability Physics Symposium (IRPS).
Publication Year :
2012
Publisher :
IEEE, 2012.

Abstract

Endurance failures are classified into three groups, all of which originate from the atomic transport of GST due to electromigration in molten phase. Based on the analysis, cell structure insusceptible to the atomic transport and for better cycling performance was proposed.

Details

Database :
OpenAIRE
Journal :
2012 IEEE International Reliability Physics Symposium (IRPS)
Accession number :
edsair.doi...........24b64aa7d8e63f144b6adad055eac0c2
Full Text :
https://doi.org/10.1109/irps.2012.6241900