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Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses
- Source :
- Microelectronics Reliability. 54:2360-2363
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- The possible physical mechanism of the anomalous recovery effect in SiGe bipolar transistors is described. The qualitative analysis of saturated oxide trapped charge and interface trap densities at very high total doses as a function of dose rate affords an explain of decreasing excess base current and increasing current gain during further low dose rate irradiation.
- Subjects :
- Recovery effect
Materials science
business.industry
Bipolar junction transistor
Oxide
Low dose rate irradiation
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Qualitative analysis
chemistry
Optoelectronics
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
business
Dose rate
Gamma irradiation
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 54
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........249c9c51e23d33210f2ab129543de78b
- Full Text :
- https://doi.org/10.1016/j.microrel.2014.04.009