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Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses

Authors :
Miguel Ullan
S. Diez
F. M. Newcomer
Alexander Grillo
E. Spencer
Viacheslav S. Pershenkov
F. Martinez-Mckinney
Helmuth Spieler
S. Rescia
Max Wilder
W. Kononenko
Source :
Microelectronics Reliability. 54:2360-2363
Publication Year :
2014
Publisher :
Elsevier BV, 2014.

Abstract

The possible physical mechanism of the anomalous recovery effect in SiGe bipolar transistors is described. The qualitative analysis of saturated oxide trapped charge and interface trap densities at very high total doses as a function of dose rate affords an explain of decreasing excess base current and increasing current gain during further low dose rate irradiation.

Details

ISSN :
00262714
Volume :
54
Database :
OpenAIRE
Journal :
Microelectronics Reliability
Accession number :
edsair.doi...........249c9c51e23d33210f2ab129543de78b
Full Text :
https://doi.org/10.1016/j.microrel.2014.04.009