Cite
Threshold voltage modulation of AlGaN/GaN MIS-FinFETs with sub-60 mV/decade subthreshold swing
MLA
Ryun-Hwi Kim, et al. “Threshold Voltage Modulation of AlGaN/GaN MIS-FinFETs with Sub-60 MV/Decade Subthreshold Swing.” 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sept. 2020. EBSCOhost, https://doi.org/10.1109/eurosoi-ulis49407.2020.9365447.
APA
Ryun-Hwi Kim, Eun Jin Kim, Woo-Hyun Ahn, Jeong-Gil Kim, Terirama Thingujam, Quan Dai, Jung-Hee Lee, Seung-Hyeon Kang, & Jun-Hyeok Lee. (2020). Threshold voltage modulation of AlGaN/GaN MIS-FinFETs with sub-60 mV/decade subthreshold swing. 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis49407.2020.9365447
Chicago
Ryun-Hwi Kim, Eun Jin Kim, Woo-Hyun Ahn, Jeong-Gil Kim, Terirama Thingujam, Quan Dai, Jung-Hee Lee, Seung-Hyeon Kang, and Jun-Hyeok Lee. 2020. “Threshold Voltage Modulation of AlGaN/GaN MIS-FinFETs with Sub-60 MV/Decade Subthreshold Swing.” 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), September. doi:10.1109/eurosoi-ulis49407.2020.9365447.