Tin dioxide ion-gated transistors

Ion gating is strategic to the development of low-voltage, printable, and flexible transistors. Tin dioxide (SnO2) is an attractive material for ion-gated transistors due to its good conductivity and low processing temperature. Solution-processed SnO2 ion-gated transistors were demonstrated on rigid and flexible substrates. The mode of transistor operation of the charge carriers can be controlled by the rational processing and patterning of the metal oxide.