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ChemInform Abstract: Electroless Silver Deposition in 100 nm Silicon Structures

ChemInform Abstract: Electroless Silver Deposition in 100 nm Silicon Structures

Authors :
Pieter J. Lusse
Marc R. Zuiddam
Zvonimir I. Kolar
Gert Frens
Marnix V. ten Kortenaar
Emile van der Drift
Jeroen J. M. de Goeij
Source :
ChemInform. 32
Publication Year :
2001
Publisher :
Wiley, 2001.

Abstract

A new and simple method is described to plate silicon structures with metallic silver for ultralarge-scale integration in dimensions down to 100 nm at an aspect ratio of 4.25. The silver deposition is initiated by an exchange reaction of silicon with silver ions, and the subsequent layer growth of the activated wafers occurs by electroless plating from supersaturated aqueous silver salt solutions at pH ∼ 11. No extra reducing agents are needed since silver ions are reduced at the catalytic silver surface by hydroxyl ions. The spontaneous ion-metal transition only proceeds at pH ∼ 11 and is likely mediated by the formation of subnanometer-sized [Ag 4 (OH) 2 ] 2+ clusters. The silver plating proceeds more easily in smaller structures and yields void-free, crystallized deposits.

Details

ISSN :
15222667 and 09317597
Volume :
32
Database :
OpenAIRE
Journal :
ChemInform
Accession number :
edsair.doi...........2436132b79a767c389d3568ad54f7e3a
Full Text :
https://doi.org/10.1002/chin.200120234