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Thermoelectric properties of p-type Bi-Sb-Te thin films with various compositions using a combinatorial method

Authors :
Hyun-Seong Park
Seungwoo Han
Hee-Jung Lee
Seungmin Hyun
Source :
Electronic Materials Letters. 7:45-49
Publication Year :
2011
Publisher :
Springer Science and Business Media LLC, 2011.

Abstract

Bismuth-telluride-based materials have excellent room-temperature thermoelectric properties. In this study, the composition of Bi-Sb-Te thin films deposited by RF magnetron sputtering was systematically varied across a single wafer. X-ray diffraction, field emission-scanning electron microscopy (FE-SEM, JEOL, JSM-7000F), energy dispersive x-ray spectroscopy (EDS) and an electron probe x-ray micro analyzer (EPMA, JEOL, JXA 8800R) were then used to investigate the thermoelectric properties of the Bi-Te films as a function of the Te fraction. The Te content of the films ranged from 45% to 87%, and their microstructure and crystal structure varied depending on the Te content. The Seebeck coefficients of the Bi-Sb-Te thin films range from +88 μV/K to +375 μV/K, and the maximum power factor of the films was 105 × 10−5 W/K2 m without post annealing.

Details

ISSN :
20936788 and 17388090
Volume :
7
Database :
OpenAIRE
Journal :
Electronic Materials Letters
Accession number :
edsair.doi...........23f03a5223f41dfddd0f440210f014a9
Full Text :
https://doi.org/10.1007/s13391-011-0307-4