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Intermediate band formation by InGaAs/GaAs multistacked quantum dots without strain compensation
- Source :
- Journal of Physics: Conference Series. 1220:012038
- Publication Year :
- 2019
- Publisher :
- IOP Publishing, 2019.
-
Abstract
- Quantum dots (QDs) are widely used for enhancing the performance of optical devices. Intermediate-band solar cells that use multistacked QDs can surpass the conversion efficiency of conventional silicon cells. We performed the optical characterization of In0.4Ga0.6As/GaAs multistacked QDs without strain compensation. We used the theoretical and experimental techniques prescribed for intermediate-band solar cells, i.e., photoluminescence (PL) spectroscopy and two-color excitations spectroscopy. The interdot spacings were not uniform and were found to be 15 nm and 7 nm. The results verify the formation of intermediate bands by the multistacked QDs. Using the theoretical studies and experimental results, we performed an in-depth study on the mechanism underlying the formation of intermediate bands by the multistacked QDs and the effect of different interdot spacings.
Details
- ISSN :
- 17426596 and 17426588
- Volume :
- 1220
- Database :
- OpenAIRE
- Journal :
- Journal of Physics: Conference Series
- Accession number :
- edsair.doi...........23e634c3adddaaae8ea44b88ff187f1a
- Full Text :
- https://doi.org/10.1088/1742-6596/1220/1/012038