Low power and low voltage VT extractor circuit and MOSFET radiation dosimeter

This work discusses two fundamental blocks of an in vivo MOS dosimeter, namely the radiation sensor and the V T -extractor circuit. It is shown that threshold extractor circuits based on an all-region MOSFET model are very appropriate for low power design. The accuracy of the extractor circuits allows using the PMOS transistors of the integrated circuit CD4007 as the radiation sensor in a dosimeter for radiotherapy applications.