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NEMO5: Predicting MoS2 heterojunctions

Authors :
Yu He
Gerhard Klimeck
Kuang-Chung Wang
Daniel Valencia
James Charles
Jesse Maassen
Michael Povolotskyi
Mark Lundstrom
Tillmann Kubis
Source :
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Publication Year :
2016
Publisher :
IEEE, 2016.

Abstract

Molybdenum disulfide (MoS 2 ) is a promising 2D material since it has a finite band gap, and its electronic band structure depends on the layer thickness. The tunability of the gate voltage on band alignment of different MoS 2 layers is analyzed. For this purpose, the multipurpose nanodevice simulation tool NEMO5 was altered by several new features: electronic bandstructure calculations in maximally localized Wannier function (MLWF) representation and self-consistent charge calculations with subatomic electrostatic resolution.

Details

Database :
OpenAIRE
Journal :
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Accession number :
edsair.doi...........233c5af986e0720179de5790b6e5d33a
Full Text :
https://doi.org/10.1109/sispad.2016.7605187