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Capacitance characterization of AlN/GaN double‐barrier resonant tunnelling diodes
- Source :
- physica status solidi c. 3:2265-2269
- Publication Year :
- 2006
- Publisher :
- Wiley, 2006.
-
Abstract
- We report on the electrical characterization of AlN/GaN/AlN double-barrier resonant tunnelling diodes (RTDs) using steady-state current-voltage and capacitance-voltage (C-V) characteristics in a wide frequency range with 2 kHz steps. The C-V characteristics of a double-barrier RTD show different behaviour under forward and reverse polarities and a strong dependence on frequency. The monotonous growth of capacitance at forward bias was registered, while a more complicated dependence was observed at reverse voltages. In order to analyse this dependence, a self-consistent calculation of the potential profile of the structure was performed taking into account polarization effects at the AlN/GaN interfaces. The peculiarities are analysed in the model of possible charge trapping at the interface states. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Details
- ISSN :
- 16101642 and 18626351
- Volume :
- 3
- Database :
- OpenAIRE
- Journal :
- physica status solidi c
- Accession number :
- edsair.doi...........22c097683f4e214f57d8ecd27d5fb535