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Construction of 2D lateral pseudoheterostructures by strain engineering
- Source :
- 2D Materials. 4:025102
- Publication Year :
- 2017
- Publisher :
- IOP Publishing, 2017.
-
Abstract
- Two-dimensional (2D) lateral heterostructures host unconventional physical properties due to their controllable band-offset tuning and interfacial sensitive characteristic. The lattice mismatch results in the difficulties to construct the perfect atomic interface in such 2D lateral heterostructures, which in turn limits their desirable properties and performances in applications. In this work, strain-modulated 2D lateral pseudoheterogeneous structures are designed and realized in the single-component 2D BiOBr nanosheets by taking advantage of their strain-sensitive crystal and electronic structures. The pseudoheterogeneous interface without atomic mismatch can be feasibly modulated by local strain distribution, which exhibits similar local electronic band structure of corresponding heterostructures. Significant enhancement in charge separation at the pseudoheterostructure was demonstrated under visible light irradiation, which is given rise to the controllable electronic band alignment across the interface. The construction of the lateral pseudoheterostructure offers a feasible and promising way to build unprecedented 2D systems with exciting properties.
- Subjects :
- Nanostructure
Materials science
business.industry
Graphene
Mechanical Engineering
Heterojunction
02 engineering and technology
General Chemistry
Electronic structure
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Crystallographic defect
0104 chemical sciences
law.invention
Crystal
Strain engineering
Mechanics of Materials
law
Optoelectronics
General Materials Science
0210 nano-technology
business
Electronic band structure
Subjects
Details
- ISSN :
- 20531583
- Volume :
- 4
- Database :
- OpenAIRE
- Journal :
- 2D Materials
- Accession number :
- edsair.doi...........229b8cf49d15f5a9e29883cf7a680aee
- Full Text :
- https://doi.org/10.1088/2053-1583/aa7100