C-band 20 watt internally matched GaAs based pseudomorphic HEMT power amplifiers

The authors present preliminary results of the effort to develop C-band high power internally-matched GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) power amplifiers. Previously developed 0.25 /spl mu/m/spl times/8 mm PHEMT chips had been selected as the building block of the power amplifiers. The single chip units are comprised of one 8 mm PHEMT chip and its input and output matching circuits. These parts are integrated into a small copper carrier. By combining four 8 mm chips with lumped elements and a distributed Wilkinson power divider/combiner, the units were assembled within the same type of carrier and delivered 20 W output power. >