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Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor
- Source :
- Journal of Applied Physics. 123:175102
- Publication Year :
- 2018
- Publisher :
- AIP Publishing, 2018.
-
Abstract
- Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.
- Subjects :
- Materials science
Condensed matter physics
General Physics and Astronomy
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Magnetic field
Condensed Matter::Materials Science
Transverse plane
symbols.namesake
Planar
Condensed Matter::Superconductivity
Seebeck coefficient
0103 physical sciences
Thermal
symbols
Condensed Matter::Strongly Correlated Electrons
Thin film
010306 general physics
0210 nano-technology
Voltage
Nernst effect
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 123
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........2231b9ed588dcaffeb5534f4ba15a384