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Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

Authors :
Pham Nam Hai
Christina A. C. Garcia
Cong Tinh Bui
Masaaki Tanaka
Nguyen Thanh Tu
Source :
Journal of Applied Physics. 123:175102
Publication Year :
2018
Publisher :
AIP Publishing, 2018.

Abstract

Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

Details

ISSN :
10897550 and 00218979
Volume :
123
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........2231b9ed588dcaffeb5534f4ba15a384