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Advanced CMOS transistors in the nanotechnology era for high-performance, low-power logic applications
- Source :
- Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
- Publication Year :
- 2005
- Publisher :
- IEEE, 2005.
-
Abstract
- Sustaining Moore's Law requires continual transistor miniaturization. Through silicon innovations and breakthroughs, CMOS transistor scaling and Moore's Law will continue at least through early next decade. By combining silicon innovations with other nanotechnologies on the same Si platform, it is expected that Moore's Law will extend well into the next decade. This paper describes the most recent advances made in silicon CMOS transistor technology and discusses the challenges and opportunities presented by the recent emerging nanoelectronic devices such as carbon nanotubefield-effect transistors (FET), Si-nanowire FETs and III-V FETs for high-performance, low-power logic applications.
- Subjects :
- Engineering
business.industry
Transistor
Electrical engineering
Nanotechnology
Hardware_PERFORMANCEANDRELIABILITY
Power (physics)
law.invention
Integrated injection logic
CMOS
Nanoelectronics
Hardware_GENERAL
law
Low-power electronics
Hardware_INTEGRATEDCIRCUITS
Miniaturization
Cmos logic circuits
business
Hardware_LOGICDESIGN
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
- Accession number :
- edsair.doi...........222169397352d69b42d851c4224eef28
- Full Text :
- https://doi.org/10.1109/icsict.2004.1434947