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Advanced CMOS transistors in the nanotechnology era for high-performance, low-power logic applications

Authors :
Jack Portland Kavalieros
B. Jin
Matthew V. Metz
Marko Radosavljevic
R. Chau
G. Dewey
B. Doyle
Mark Beaverton Doczy
Suman Datta
Amlan Majumdar
Source :
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
Publication Year :
2005
Publisher :
IEEE, 2005.

Abstract

Sustaining Moore's Law requires continual transistor miniaturization. Through silicon innovations and breakthroughs, CMOS transistor scaling and Moore's Law will continue at least through early next decade. By combining silicon innovations with other nanotechnologies on the same Si platform, it is expected that Moore's Law will extend well into the next decade. This paper describes the most recent advances made in silicon CMOS transistor technology and discusses the challenges and opportunities presented by the recent emerging nanoelectronic devices such as carbon nanotubefield-effect transistors (FET), Si-nanowire FETs and III-V FETs for high-performance, low-power logic applications.

Details

Database :
OpenAIRE
Journal :
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
Accession number :
edsair.doi...........222169397352d69b42d851c4224eef28
Full Text :
https://doi.org/10.1109/icsict.2004.1434947