Low impedance antenna arrangement of internal linear ICP source for large area FPD processing

In this study, two different types of internal linear antennas were compared and their characteristics were investigated for a large area ICPs applied to FPD processing. The measured plasma density for the double comb-type antenna was higher than 2 × 1011/cm3 and the etch rates of photoresist and SiO2 at 5000 W rf power, − 60 V of dc-bias voltage, and 15 mTorr SF6 were about 3000 A/min and 1500 A/min. The etch non-uniformity of the photoresist within the substrate was about 7% at 5000 W of rf power.