DEFECTS IN AlAs LAYERS AND GaAs-AlAs SUPERLATTICES

In Si doped GaAlAs layers and two different types of GaAs-AlAs superlattices grown by molecular beam epitaxy we detect using deep level transient spectroscopy the DX center. The energetical location of the DX level is compared to the band structures of these superlattices allowing us to conclude that the DX state is linked to the L band.