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Low noise metamorphic HEMT devices and amplifiers on GaAs substrates
- Source :
- 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
- Publication Year :
- 2003
- Publisher :
- IEEE, 2003.
-
Abstract
- Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC power giving a linearity figure of merit (LFOM) of 137) have been obtained for InAlAs-InGaAs metamorphic HEMTs on a GaAs substrate. These devices have been used to design and fabricate microwave and millimeter wave amplifiers. Amplifier results are presented.
Details
- Database :
- OpenAIRE
- Journal :
- 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)
- Accession number :
- edsair.doi...........21deb027fdb81222627a9f50e874e66a