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Role of Cu on the electrical properties of CdTe∕CdS solar cells: A cross-sectional conductive atomic force microscopy study

Authors :
H. R. Moutinho
Mowafak Al-Jassim
Matthew Young
Wyatt K. Metzger
Chun-Sheng Jiang
Anna Duda
Timothy A. Gessert
R. G. Dhere
Source :
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:361
Publication Year :
2007
Publisher :
American Vacuum Society, 2007.

Abstract

The authors have studied the electrical properties of CdTe∕CdS solar cells using conductive atomic force microscopy (C-AFM) applied to cross sections of the device. This novel technique uses the sharp tip of an atomic force microscope to contact the sample and apply an electrical potential, allowing the study of device properties with spatial resolution second to none. The CdTe∕CdS∕SnO2/substrate structures were treated with CdCl2 and etched with bromine/methanol or nitric/phosphoric acid solution. Finally, a Cu-containing back contact was applied to the surface of the device. The C-AFM analysis showed the existence of high-conductivity regions in CdTe close to the film surface, while the regions close to the junction with CdS remain resistive. The width of the conductive area in general varied laterally and, occasionally, reached the junction in some spots, causing microshunts in the devices. By analyzing the fracture of the cross sections, they observed that the conductive areas are concentrated at grai...

Details

ISSN :
10711023
Volume :
25
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Accession number :
edsair.doi...........21ddd3514da5b5bdfd757e33b0e5002a
Full Text :
https://doi.org/10.1116/1.2699923