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Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

Authors :
Hans Mertens
Guido Groeseneken
Alessio Spessot
Niamh Waldron
Liesbeth Witters
Erik Bury
Nadine Collaert
D. Linten
B. Kaczer
Naoto Horiguchi
X. Zhou
Source :
2016 IEEE International Electron Devices Meeting (IEDM).
Publication Year :
2016
Publisher :
IEEE, 2016.

Abstract

The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple processing options. Considerations for managing SH in future technologies are provided.

Subjects

Subjects :
010302 applied physics
Materials science
Silicon
business.industry
chemistry.chemical_element
Nanotechnology
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
chemistry.chemical_compound
chemistry
Logic gate
0103 physical sciences
Indium phosphide
Optoelectronics
0210 nano-technology
business
Self heating
Indium gallium arsenide

Details

Database :
OpenAIRE
Journal :
2016 IEEE International Electron Devices Meeting (IEDM)
Accession number :
edsair.doi...........21db5ffe605b0856631a5bf3d644c512

Tools

Authors Abstract Subjects Details