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Formation of 12-nm Nanodot Pattern by Block Copolymer Self-Assembly Technique
- Source :
- Key Engineering Materials. 497:122-126
- Publication Year :
- 2011
- Publisher :
- Trans Tech Publications, Ltd., 2011.
-
Abstract
- In this work, we studied the fabrication of 12-nm-size nanodot pattern by self-assembly technique using high-etching-selectivity poly (styrene)-poly (dimethyl-siloxane) (PS-PDMS) block copolymers. The necessary etching duration for removing the very thin top PDMS layer is unexpectedly longer when the used molecular weight of PS-PDMS is 13.5-4.0 kg/mol (17.5 kg/mol total molecular weight) than that of 30.0-7.5 kg/mol (37.5 kg/mol total molecular weight). From this experimental result, it was clear that PS-PDMS with lower molecular weight forms thicker PDMS layer on the air/polymer interface of PS-PDMS film after microphase separation process. The 22-nm pitch of nanodot pattern by self-assembly holds the promise for the low-cost and high-throughput fabrication of 1.3 Tbit/inch2storage device. Nanodot size of 12 nm also further enhances the quantum-dot effect in quantum-dot solar cell.
- Subjects :
- chemistry.chemical_classification
Fabrication
Materials science
Mechanical Engineering
technology, industry, and agriculture
macromolecular substances
Polymer
Styrene
chemistry.chemical_compound
chemistry
Chemical engineering
Mechanics of Materials
Etching (microfabrication)
Polymer chemistry
Copolymer
General Materials Science
Nanodot
Self-assembly
Layer (electronics)
Subjects
Details
- ISSN :
- 16629795
- Volume :
- 497
- Database :
- OpenAIRE
- Journal :
- Key Engineering Materials
- Accession number :
- edsair.doi...........21b0b50ec811056f55bc577d5cb30d6f
- Full Text :
- https://doi.org/10.4028/www.scientific.net/kem.497.122