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Tuning the hybridization and magnetic ground state of electron and hole doped CeOs2Al10 : An x-ray spectroscopy study

Authors :
Kai Chen
Jo Kawabata
Toshiro Takabatake
F. Strigari
Arata Tanaka
A. Severing
Peter Bencok
Fadi Choueikani
Martin Sundermann
Source :
Physical Review B. 97
Publication Year :
2018
Publisher :
American Physical Society (APS), 2018.

Abstract

Here we present linear and circular polarized soft x-ray absorption spectroscopy (XAS) data at the Ce $M_{4,5}$ edges of the electron (Ir) and hole-doped (Re) Kondo semiconductor CeOs$_2$Al$_{10}$. Both substitutions have a strong impact on the unusual high N$\acute{e}$el temperature, $T_N$=28.5\,K, and also the direction of the ordered moment in case of Ir. The substitution dependence of the linear dichroism is weak thus validating the crystal-field description of CeOs$_2$Al$_{10}$ being representative for the Re and Ir substituted compounds. The impact of electron- and hole-doping on the hybridization between conduction and 4$f$ electrons is related to the amount of $f^0$ in the ground state and reduction of x-ray magnetic circular dichroism. A relationship of $cf$-hybridization strength and enhanced $T_N$ is discussed. The direction and doping dependence of the circular dichroism is in agreement with strong Kondo screening along the crystallographic $a$ direction.

Details

ISSN :
24699969 and 24699950
Volume :
97
Database :
OpenAIRE
Journal :
Physical Review B
Accession number :
edsair.doi...........21a5c8d54c2b236651e59e14c4a9c9ef
Full Text :
https://doi.org/10.1103/physrevb.97.155106