Effect of temperature on light–current (L–IL) characteristics of GaAlAs based infrared emitter

The light–current characteristics of GaAlAs based infrared emitter (880 nm) have been studied at the temperature 303 K and 120 K and the light–temperature as well as the effective carrier lifetime is also measured in the temperature range 350–120 K. The experimental results show that the light output power versus current follows a linear relation when cooled to 120 K, for both high and low driving currents of the infrared emitter. On the other hand, this measurement shows deviation from linearity at room temperature and the deviation has been estimated. When the ambience temperature is lowered from 350 K to 120 K the light output increases by about 102%. Our experimental results show that light output is inversely related to the effective carrier lifetime.