Materials Characterization and Device Performance of a CMR-Ferroelectric Heterostructure

The films of colossal magnetoresistive La0.67Ca0.33MnO3 (LCMO) and ferroelectric SbSI were grown by pulsed laser deposition method for fabricating their heterostructures. By varying the processing conditions during film growth and controlling subsequently the annealing conditions, the resistivity transport properties of the LCMO films could be greatly modified. Preliminary tests on the ferroelectric field effect transistor (FeFET) based on LCMO-SbSI heterostructure showed that the device behaves like a nonvolatile memory element. The FeFET showed a maximum channel modulation of ∼10% at room temperature, and the switching voltage was less than 2 V.