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Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates
- Source :
- IEEE Transactions on Electron Devices. 62:2450-2456
- Publication Year :
- 2015
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2015.
-
Abstract
- In0.53Ga0.47As Esaki tunnel diodes grown by molecular beam epitaxy on an Si substrate via a graded buffer and control In0.53Ga0.47As Esaki tunnel diodes grown on an InP substrate are compared in this paper. Statistics are used as a tool to show peak-to-valley ratio for the III–V on Si sample and the control that perform similarly below $8.6 \times 10^{-10}$ cm $^{2}$ . The existence of a critical device area suggests the potential to utilize III–V on Si for other deeply scaled tunnel devices.
- Subjects :
- Materials science
Silicon
business.industry
Doping
chemistry.chemical_element
Substrate (electronics)
Temperature measurement
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Si substrate
Indium phosphide
Optoelectronics
Electrical and Electronic Engineering
business
Molecular beam epitaxy
Diode
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 62
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........206a17117100c233f3e03fa6a5c8a6bb