Impact of Optical Phonon Scattering on Inversion Channel Mobility in 4-H-SiC Trenched MOSFETs

Authors :: K. Kutsuki
S. Kawaji
Y. Watanabe
T. Onishi
H. Fujiwara
K. Yamamoto
T. Yamamoto
Source :: Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Publication Year :: 2016
Publisher :: The Japan Society of Applied Physics, 2016.

Subjects :: Materials science
Phonon scattering
Inversion (meteorology)
Computational physics

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........2051e339eea1276d1b39947bee35e792

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