Challenges with high aspect ratio nanoimprint

When nanoimprint is not used for lithography purposes (NIL), but for the direct patterning of polymeric layers, high aspect ratio patterns may be of interest for a number of applications. The definition of such patterns in a nanoimprint process deals with two aspects, a successful filling of the high aspect ratio cavities of the stamp used, followed by a successful separation of the high aspect ratio structures defined in the polymeric layer on the substrate, from the stamp. These two aspects are addressed by shedding light to the impact of capillary effects during the filling of high aspect ratio cavities, and to the deformation processes involved in the separation of the stamp from the polymeric structures, where adhesional energies have to be overcome without cohesional failure. Both aspects are discussed in terms of the geometries involved, the stamp geometries as well as the polymeric layer thickness, and correlations with thermally-assisted (T-NIL) and UV-assisted (UV-NIL) processing are deduced. The aspects discussed are typical of a nanoimprint situation with thin polymeric layers on hard substrates.