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Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin
- Source :
- MRS Proceedings. 345
- Publication Year :
- 1994
- Publisher :
- Springer Science and Business Media LLC, 1994.
-
Abstract
- XPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.
Details
- ISSN :
- 19464274 and 02729172
- Volume :
- 345
- Database :
- OpenAIRE
- Journal :
- MRS Proceedings
- Accession number :
- edsair.doi...........2000067d9f7b7eb27a07ccbdea93da1c