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Passivation and activation of Mg acceptors in heavily doped GaN
- Source :
- Journal of Applied Physics. 110:044508
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- Electron paramagnetic resonance measurements are used to monitor the passivation and activation of the Mg-related acceptor in GaN doped with different concentrations of Mg, up to 2 × 1020 cm−3. Samples were annealed in either forming gas (H2:N2) or pure N2 between 200 and 900 °C. As expected, the Mg-related EPR signal is reduced by at least a factor of ten during the forming gas treatment; while the pure N2 environment revives the signal. However, the study also shows that reactions between Mg and hydrogen occur at a temperature as low as 525 °C in the 1020 cm−3 Mg doped samples; while in more lightly doped samples, temperatures greater than 700 °C are required to observe changes in the Mg signal intensity. While the observations support the model in which a hydrogen atom ionizes at the Mg impurity and the remaining proton bonds at a near neighbor, the different temperature dependence suggests that hydrogen diffusion is affected by the increased Mg concentration.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 110
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........1faf9ea0b14ece87477eaf1c868291b7