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Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode $0.18~\mu\hbox{m}$ CMOS Image Sensors
- Source :
- IEEE Transactions on Nuclear Science. 61:636-645
- Publication Year :
- 2014
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2014.
-
Abstract
- The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 61
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........1f670acffc4bf333a1eded6d8c400d87
- Full Text :
- https://doi.org/10.1109/tns.2013.2297204