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Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode $0.18~\mu\hbox{m}$ CMOS Image Sensors

Authors :
V. Prevost
T. Nuns
Olivier Gilard
J. Vaillant
Ehrbar Martin
P. Fereyre
Mathieu Boutillier
J.-P. David
Source :
IEEE Transactions on Nuclear Science. 61:636-645
Publication Year :
2014
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2014.

Abstract

The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.

Details

ISSN :
15581578 and 00189499
Volume :
61
Database :
OpenAIRE
Journal :
IEEE Transactions on Nuclear Science
Accession number :
edsair.doi...........1f670acffc4bf333a1eded6d8c400d87
Full Text :
https://doi.org/10.1109/tns.2013.2297204