Spin Blockade and Magnetoresistance in Double Quantum Well Diode with Inverted Electric Field

In the last century the band-gap engineering including modulation doping technique, largely expanded the possibility of solid state devices. The concept of topology came into our view in the beginning of the present century. The first claim of topological insulator utilized quantum well to kill the topological anomaly in HgTe. Synthesis of artificial topological material is then one of the next target.