Characterization of octadecaborane implantation into Si using molecular dynamics

We carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si. We obtained and analyzed the doping profiles, lateral straggling and the damage amount and morphology produced within the target, as well as its annealing behavior. Our simulation results indicate that the use of octadecaborane clusters for the fabrication of ultrashallow junctions shows several advantages with respect to monatomic B beams, mainly related to target self-amorphization which reduces channeling and the amount of residual damage at the end of range.