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Semiconductor-to-metal and metal-to-metal transitions in the three-dimensional mixed-valence compound Cs2Au2I6 under high pressures
- Source :
- Solid State Communications. 73:743-745
- Publication Year :
- 1990
- Publisher :
- Elsevier BV, 1990.
-
Abstract
- Electrical resistivity of three-dimensional Au mixed-valence compound Cs2Au2I6 was investigated under hydrostatic pressures up to 7.0 GPa and temperatures between room temperature and 480 K, where a semiconductor-to-metal transition (P=4.5 GPa, T=room temperature) and a metal-to-metal transition (P=6.5 GPa, T≈330 K) were observed. The metallic phase appeared at P=6.5 GPa and T⪆ 330 K could be obtained at room temperature and ambient pressure as a metastable phase, whose structure was found to be a cubic perovskite structure from the X-ray diffraction pattern. In connection with these results, the Au valence state of Cs2Au2I6 under high pressures was discussed.
- Subjects :
- chemistry.chemical_classification
Valence (chemistry)
business.industry
Chemistry
Hydrostatic pressure
Analytical chemistry
Mineralogy
General Chemistry
Condensed Matter Physics
Metal
Semiconductor
Electrical resistivity and conductivity
visual_art
Metastability
Materials Chemistry
visual_art.visual_art_medium
business
Inorganic compound
Ambient pressure
Subjects
Details
- ISSN :
- 00381098
- Volume :
- 73
- Database :
- OpenAIRE
- Journal :
- Solid State Communications
- Accession number :
- edsair.doi...........1ecbb5d18c8db40f1d116bf9db05a12e
- Full Text :
- https://doi.org/10.1016/0038-1098(90)90162-5