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A 30 GHz - 100 mW GaAs FET

Authors :
K. Shirahata
M. Nakatani
A. Nara
Y. Kadowaki
O. Ishihara
Source :
MTT-S International Microwave Symposium Digest.
Publication Year :
2005
Publisher :
MTT005, 2005.

Abstract

Power output of 100 mW and linear power gain of 5 dB have been realized at 30 GHz for the GaAs FET fabricated by optimizing physical parameters of the channel for high power end.

Subjects

Subjects :
Power gain
Engineering
business.industry
Electrical engineering
Power output
business
Communication channel
Power (physics)

Details

Database :
OpenAIRE
Journal :
MTT-S International Microwave Symposium Digest
Accession number :
edsair.doi...........1e71e66b122c50c560a3d3cd3ce86779

Tools

Authors Abstract Subjects Details