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A 30 GHz - 100 mW GaAs FET
- Source :
- MTT-S International Microwave Symposium Digest.
- Publication Year :
- 2005
- Publisher :
- MTT005, 2005.
-
Abstract
- Power output of 100 mW and linear power gain of 5 dB have been realized at 30 GHz for the GaAs FET fabricated by optimizing physical parameters of the channel for high power end.
Details
- Database :
- OpenAIRE
- Journal :
- MTT-S International Microwave Symposium Digest
- Accession number :
- edsair.doi...........1e71e66b122c50c560a3d3cd3ce86779