Noise and submillimeter wave generation in InP diodes

High frequency (350 to 750 GHz) generation in submicron InP diodes is investigated by modified hydrodynamic (MH) and Monte Carlo particle (MCP) techniques. The noise power spectral density Pn in the diode loaded by resistor R and generation spectra Pg in series resonant LR circuit are calculated by MCP technique. It is shown that at the biases above the generation threshold the Pn has a peak at the frequency fmax which corresponds to the highest generation frequency at the given R. The excess noise arise in the frequency region where the real part of diode impedance has negative values. The Pg broadening at high frequencies is the result of interaction between the self‐oscillation at frequency fmax and LR circuit driven oscillations.