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Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method
- Source :
- Key Engineering Materials. 697:841-845
- Publication Year :
- 2016
- Publisher :
- Trans Tech Publications, Ltd., 2016.
-
Abstract
- Silicon carbide nanowires have been extensively studied because of their unique physical and chemical properties. They can be applied in high temperature, high frequency, high power, and corrosive environments, and have a wide range of applications in electronics, chemical industry, energy and other fields. In this paper, SiC nanowires with high output were synthesized by chemical vapor deposition method using methyltrichlorosilane as raw material. The influences of the catalyst and temperature were studied. SiC nanochains were also obtained by adding Al2O3 powder under appropriate temperature controlled strategy. These two kinds of one-dimensional SiC nanomaterials were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectrometer (EDS) and transmission electron microscope (TEM) methods.
- Subjects :
- Materials science
Spectrometer
Scanning electron microscope
Mechanical Engineering
Nanowire
Nanotechnology
02 engineering and technology
Chemical vapor deposition
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Nanomaterials
Methyltrichlorosilane
chemistry.chemical_compound
chemistry
Mechanics of Materials
Transmission electron microscopy
Silicon carbide
General Materials Science
0210 nano-technology
Subjects
Details
- ISSN :
- 16629795
- Volume :
- 697
- Database :
- OpenAIRE
- Journal :
- Key Engineering Materials
- Accession number :
- edsair.doi...........1e54932428ab61b95f527ec65cc784c8