Total ionizing dose radiation effects in 4T-CMOS image sensors at different biased conditions

Authors :: 郭旗 Guo Qi
冯婕 Feng Jie
李豫东 Li Yu-dong
周东 Zhou Dong
马林东 Ma Lin-dong
文林 Wen Lin
Source :: Infrared and Laser Engineering. 47:1017002
Publication Year :: 2018
Publisher :: Shanghai Institute of Optics and Fine Mechanics, 2018.

Subjects :: Materials science
CMOS
Space and Planetary Science
business.industry
Absorbed dose
Aerospace Engineering
Optoelectronics
Electrical and Electronic Engineering
Image sensor
Radiation
business
Atomic and Molecular Physics, and Optics

Full Text Access

Tools