Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell

Authors :: Min-Hwi Kim
Seongjae Cho
Sungjun Kim
Byung-Gook Park
Source :: IEICE Transactions on Electronics. :547-550
Publication Year :: 2016
Publisher :: Institute of Electronics, Information and Communications Engineers (IEICE), 2016.

Subjects :: 010302 applied physics
Materials science
business.industry
Polarity (physics)
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Silicon nitride
chemistry
Memory cell
Resistive switching
0103 physical sciences
Electronic engineering
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business

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