Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon

Gold was in-diffused into n-type silicon single crystals at 800-1150°C. DLTS spectra of the Schottky diode of the specimen were measured and four peaks (E c-0.16, E c-0.24, E c-0.30 and E c-0.54 eV) were observed. As the gold concentration and the gold-diffusion temperature increased, the relative height of the peak of E c-0.24 eV increased compared to the most prominent peak of E c-0.54 eV. The concentration of the peak of E c-0.30 eV was saturated at about (1-4)×1014 cm-3.