10 Gbit/s Semi-Insulating Buried Heterostructure Loss-less Reflective Amplified Modulator for Wavelength Agnostic Networks

Authors :: F. Martin
Christophe Kazmierski
Jean Landreau
N. Lagay
D. Carpentier
Romain Brenot
Christophe Jany
F. Alexandre
Alexandre Garreau
Nicolas Dupuis
Jean Decobert
Source :: OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference.
Publication Year :: 2008
Publisher :: IEEE, 2008.
Abstract: We integrated an AlGalnAs modulator-amplifier using semi-insulating buried hetrostructure and selective area growth. The reflective component exhibits insertion gain, operates at 10Gbit/s over 80nm and links bi-directional 10km SMF up to 60°C.

Subjects :: Materials science
business.industry
Heterojunction
Gallium arsenide
chemistry.chemical_compound
Wavelength
symbols.namesake
Optics
chemistry
Gigabit
Component (UML)
symbols
Optoelectronics
Rayleigh scattering
business
Semi insulating
Insertion gain

Database :: OpenAIRE
Journal :: OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference
Accession number :: edsair.doi...........1d8d0593a1c66643e96c7ae89103c220
Full Text :: https://doi.org/10.1109/ofc.2008.4528436

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