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High‐power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process
- Source :
- Journal of Applied Physics. 72:319-321
- Publication Year :
- 1992
- Publisher :
- AIP Publishing, 1992.
-
Abstract
- The paper describes preparation and performance of single lateral mode buried heterostructure InGaAsP/InP, λ=1.3 μm, laser diodes. It is shown that an improvement in the mesa etching and regrowth techniques permits obtaining laser diodes whose threshold current densities are about 1 kA/cm2 and are practically independent of stripe width. The diodes thus prepared had threshold currents of 8–20 mA at a cavity length L=200–500 μm and a stripe width about 2–3 μm. The maximum continuous wave power in single lateral mode operation was 160 mW.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 72
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........1d6e38eac3618ce814b9929949b591f5