High‐power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process

The paper describes preparation and performance of single lateral mode buried heterostructure InGaAsP/InP, λ=1.3 μm, laser diodes. It is shown that an improvement in the mesa etching and regrowth techniques permits obtaining laser diodes whose threshold current densities are about 1 kA/cm2 and are practically independent of stripe width. The diodes thus prepared had threshold currents of 8–20 mA at a cavity length L=200–500 μm and a stripe width about 2–3 μm. The maximum continuous wave power in single lateral mode operation was 160 mW.