First demonstration of vertical Ga2O3 MOSFET: Planar structure with a current aperture

MLA

Ken Goto, et al. “First Demonstration of Vertical Ga2O3 MOSFET: Planar Structure with a Current Aperture.” 2017 75th Annual Device Research Conference (DRC), June 2017. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........1cf08797c9ef5117544dc6f9fd01339f&authtype=sso&custid=ns315887.

APA

Ken Goto, Shigenobu Yamakoshi, Yoshinao Kumagai, Masataka Higashiwaki, Man Hoi Wong, Akito Kuramata, & Hisashi Murakami. (2017). First demonstration of vertical Ga2O3 MOSFET: Planar structure with a current aperture. 2017 75th Annual Device Research Conference (DRC).

Chicago

Ken Goto, Shigenobu Yamakoshi, Yoshinao Kumagai, Masataka Higashiwaki, Man Hoi Wong, Akito Kuramata, and Hisashi Murakami. 2017. “First Demonstration of Vertical Ga2O3 MOSFET: Planar Structure with a Current Aperture.” 2017 75th Annual Device Research Conference (DRC), June. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........1cf08797c9ef5117544dc6f9fd01339f&authtype=sso&custid=ns315887.