Electronic structure and optical properties of Ge- and F-doped α-Ga2O3: First-principles investigations*

MLA

Ti-Kang Shu, et al. “Electronic Structure and Optical Properties of Ge- and F-Doped α-Ga2O3: First-Principles Investigations*.” Chinese Physics B, vol. 29, Dec. 2020, p. 126301. EBSCOhost, https://doi.org/10.1088/1674-1056/abbbff.

APA

Ti-Kang Shu, Shao-Qing Wang, San-Dong Guo, Xue-Lan Zhang, Rui-Xia Miao, & Chen-He Zhao. (2020). Electronic structure and optical properties of Ge- and F-doped α-Ga2O3: First-principles investigations*. Chinese Physics B, 29, 126301. https://doi.org/10.1088/1674-1056/abbbff

Chicago

Ti-Kang Shu, Shao-Qing Wang, San-Dong Guo, Xue-Lan Zhang, Rui-Xia Miao, and Chen-He Zhao. 2020. “Electronic Structure and Optical Properties of Ge- and F-Doped α-Ga2O3: First-Principles Investigations*.” Chinese Physics B 29 (December): 126301. doi:10.1088/1674-1056/abbbff.