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Observation of bandgap in epitaxial bilayer graphene field effect transistors

Authors :
Yoshiaki Sekine
Masao Nagase
Hiroyuki Kageshima
Hiroki Hibino
Shin Ichi Tanabe
Source :
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Publication Year :
2010
Publisher :
The Japan Society of Applied Physics, 2010.

Subjects

Subjects :
Materials science
Band gap
Field-effect transistor
Nanotechnology
Bilayer graphene
Epitaxy

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........1c7863d469f8af720a728b72ea0aeb17
Full Text :
https://doi.org/10.7567/ssdm.2010.j-4-3
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