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All two-input logic gates by a single-stage single electron box

Authors :
Mehdi Ahmadian
Mohammad Javad Sharifi
Source :
International Journal of Electronics. 105:1598-1613
Publication Year :
2018
Publisher :
Informa UK Limited, 2018.

Abstract

In this paper, the design of all two-input logic gates is presented by only a single-stage single electron box (SEB) for the first time. All gates are constructed based on a same circuit. We have used unique periodic characteristics of SEB to design these gates and present all two-input logic gates (monotonic/non-monotonic, symmetric/non-symmetric) by a single-stage design. In conventional monotonic devices, such as MOSFETs, implementing non-monotonic logic gates such as XOR and XNOR is impossible by only a single-stage design, and a multistage design is required which leads to more complexity, higher power consumption and less speed of the gates. We present qualitative design at first and then detailed designs are investigated and optimised by using our previous works. All designs are verified by a single electron simulator which shows correct operation of the gates.

Details

ISSN :
13623060 and 00207217
Volume :
105
Database :
OpenAIRE
Journal :
International Journal of Electronics
Accession number :
edsair.doi...........1c669b82110d9b089fad7174bb873577
Full Text :
https://doi.org/10.1080/00207217.2018.1477193