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High-Performance Devices Based on InSe–In1–xGaxSe Van der Waals Heterojunctions
- Source :
- ACS Applied Materials & Interfaces. 12:24978-24983
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- Multilayer InSe is a promising material for high-performance optoelectronic applications because of its small direct band gap and good light absorption. However, as a photoconductive photodetector,...
- Subjects :
- Materials science
business.industry
Photoconductivity
Photodetector
Heterojunction
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
symbols.namesake
symbols
Optoelectronics
General Materials Science
Direct and indirect band gaps
van der Waals force
0210 nano-technology
business
Diode
Subjects
Details
- ISSN :
- 19448252 and 19448244
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- ACS Applied Materials & Interfaces
- Accession number :
- edsair.doi...........1c64174566f6bd9e9056e7ca74c94813