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Growth and structural properties of epitaxial GaxIn1−xP on InP
- Source :
- Journal of Applied Physics. 71:1737-1743
- Publication Year :
- 1992
- Publisher :
- AIP Publishing, 1992.
-
Abstract
- The growth of heteroepitaxial GaxIn1−xP on InP for 0
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 71
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........1c53b2459c77db4801e2c58a49f247f5
- Full Text :
- https://doi.org/10.1063/1.351206